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ESD7104
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (Note 1)
Clamping Voltage (Note 2)
Clamping Voltage (Note 3)
V RWM
V BR
I R
V C
V C
V C
I/O Pin to GND
I T = 1 mA, I/O Pin to GND
V RWM = 5 V, I/O Pin to GND
I PP = 1 A, I/O Pin to GND (8 x 20 m s pulse)
IEC61000 ? 4 ? 2, ± 8 KV Contact
I PP = ± 8 A
I PP = ± 16 A
5.5
See Figures 1 and 2
14.1
19.5
5.0
1.0
10
V
V
m A
V
V
V
Junction Capacitance
Junction Capacitance
C J
C J
V R = 0 V, f = 1 MHz between I/O Pins
V R = 0 V, f = 1 MHz between I/O Pins and GND
0.2
0.3
0.3
0.35
pF
pF
1. Surge current waveform per Figure 5.
2. For test procedure see Figures 3 and 4 and application note AND8307/D.
3. ANSI/ESD STM5.5.1 ? 2008 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z 0 = 50 W , t p = 100 ns, t r = 4 ns, averaging window; t 1 = 30 ns to t 2 = 60 ns.
80
70
60
50
40
30
20
10
0
10
0
? 10
? 20
? 30
? 40
? 50
? 60
? 70
? 10
? 20
0
20
40
60
80
100
120
140
? 80
? 20
0
20
40
60
80
100
120
140
TIME (ns)
Figure 1. IEC61000 ? 4 ? 2 +8 KV Contact
Clamping Voltage
http://onsemi.com
2
TIME (ns)
Figure 2. IEC61000 ? 4 ? 2 ? 8 KV Contact
Clamping Voltage
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